Search results for "Silicon alloy"

showing 2 items of 2 documents

Electrochemical Fabrication and Physicochemical Characterization of Metal/High-k Insulating Oxide/Polymer/Electrolyte Junctions

2014

Photoelectrochemical polymerization of poly(3,4-ethylenedioxythiophene), PEDOT, was successfully realized on anodic film grown to 50 V on magnetron sputtered Ti-6 atom % Si alloys. Scanning electron microscopy allowed us to evidence formation of compact and uniform polymer layers on the oxide surface. Photoelectrochemical and impedance measurements showed that photopolymerization allows one to grow PEDOT in its conducting state, while a strong cathodic polarization is necessary to bring the polymer in its p-type semiconducting state. Information on the optical and electrical properties of metal/oxide/polymer/electrolyte junctions proves that PEDOT has promising performance as an electrolyte…

Materials scienceFabricationElectrochemical fabricationInorganic chemistryImpedance measurementOxidePhysico-chemical characterizationPoly-3 4-ethylenedioxythiopheneElectrolyteElectrochemistrySettore ING-INF/01 - ElettronicaPhotoelectrochemistrychemistry.chemical_compoundPEDOT:PSSPhysical and Theoretical ChemistryConducting statechemistry.chemical_classificationPhotopolymerizationCathodic polarizationPolymerSilicon alloySurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsOptical and electrical propertieSettore ING-IND/23 - Chimica Fisica ApplicataGeneral EnergychemistryPolymerizationCavity magnetronLithium IntercalationTitanium alloyScanning electron microscopyThe Journal of Physical Chemistry C
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Light absorption and conversion in solar cell based on Si:O alloy

2013

Thin film Si:O alloys have been grown by plasma enhanced chemical vapor deposition, as intrinsic or highly doped (1 to 5 at. % of B or P dopant) layers. UV-visible/near-infrared spectroscopy revealed a great dependence of the absorption coefficient and of the optical gap (Eg) on the dopant type and concentration, as Eg decreases from 2.1 to 1.9 eV, for the intrinsic or highly p-doped sample, respectively. Thermal annealing up to 400 °C induces a huge H out-diffusion which causes a dramatic absorption increase and a reduction of Eg, down to less than 1.8 eV. A prototypal solar cell has been fabricated using a 400 nm thick, p-i-n structure made of Si:O alloy embedded within flat transparent c…

Open circuit voltageSiliconAbsorption co-efficientMaterials scienceAnnealing (metallurgy)Analytical chemistryGeneral Physics and AstronomyPhotovoltaic effectChemical vapor depositionSettore ING-INF/01 - Elettronicalaw.inventionPlasma enhanced chemical vapor depositionOut-diffusionPlasma-enhanced chemical vapor depositionlawSolar cellDoping (additives)Thin filmAbsorption (electromagnetic radiation)Infrared spectroscopyElectrical analysiDopantDopingP-i-n structureDevice fabricationThermal-annealingSolar cells Silicon alloysPhotovoltaicTransparent conductive oxides Cerium alloyJournal of Applied Physics
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